462993
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462993
Aldrich
Methylsilane
electronic grade, ≥99.9%
| CAS Number: | 992-94-9 |
| Linear Formula: | CH3SiH3 |
| Molecular Weight: | 46.14 |
| Beilstein Registry Number: | 1730728 |
| EC Number: | 213-598-5 |
| MDL number: | MFCD00053655 |
| PubChem Substance ID: | 24869881 |
Description
| Packaging | 10, 20 g in ss cyl |
| Features and Benefits | Precursor to silicon carbide or alloy thin films by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). |
| Methylsilane is used in the plasma-assisted CVD of silicon carbide (SiC) and as a precursor to the epitaxial growth of SiGeC alloy layers via rapid thermal CVD.1 Recent developments include the use of methylsilane as a precursor to silicon-carbon-hydrogen polymer used as photoresists. | |
| Recommended products | Stainless steel regulators Z527416 or Z527424 are recommended. |
Properties
| grade | electronic grade |
| vapor density | 0.628 (−58 °C, vs air) |
| assay | ≥99.9% |
| form | liquid |
| total impurities | <10 ppm Carbon dioxide (CO2) |
| <10 ppm Nitrogen (N2) | |
| <100 ppm Dimethylsilane (CH3)2SiH2 | |
| <100 ppm Methylchlorosilane CH3SiH2Cl | |
| <2 ppm Argon + Oxygen (Ar + O2) | |
| <50 ppm Methane (CH4) | |
| <50 ppm Silane (SiH4) | |
| bp | −57 °C(lit.) |
| mp | −157 °C(lit.) |
Safety
| Hazard Codes | F+,Xn |
| Risk Statements | 12-14-20/21 |
| Safety Statements | 16-24-26-36/37/39 |
| RIDADR | UN 3161 2.1 |
| WGK Germany | 1 |
References
| Cited Reference | 1. Mi, J. et. al. J. Vac. Sci. Technol. B 14, 1660, (1996) |
| Beilstein | Beil. 4,IV,3873 |
